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Sub-50-nm In0.7Ga0.3As MOSFETs With Various Barrier Layer Materials

Identifieur interne : 001475 ( Main/Repository ); précédent : 001474; suivant : 001476

Sub-50-nm In0.7Ga0.3As MOSFETs With Various Barrier Layer Materials

Auteurs : RBID : Pascal:12-0092155

Descripteurs français

Pascal (Inist)
- Technologie MOS, Transistor MOSFET, Couche barrière, Evaluation performance, Canal enterré, Transconductance, Méthode couche atomique, Matériau barrière, Diélectrique permittivité élevée, Alumine, Phosphure d'indium, Composé binaire, Al2O3, InP, Effet DIBL.

English descriptors

KwdEn :
- Alumina, Atomic layer method, Barrier layer, Barrier material, Binary compound, Buried channel, DIBL effect, High k dielectric, Indium phosphide, MOS technology, MOSFET, Performance evaluation, Transconductance.

Abstract

Sub-50-nm In_0.7Ga_0.3As MOSFETs with high-k dielectric Al₂O₃ have been demonstrated and investigated. The device performance of buried-channel In_0.7Ga_0.3As MOSFETs with various barrier layer materials (i.e., InP and InAlAs) has been analyzed and compared to that of devices without a barrier layer. The 40-nm-gate-length In_0.7Ga_0.3As MOSFETs with InP/InAlAs barrier exhibit a subthreshold swing of 130 mV/dec, a drain-induced barrier lowering of 174 mV/V, and an extrinsic transconductance of 570 mS/mm at V_ds = 1 V. Scaling behaviors of buried-channel In_0.7Ga_0.3As MOSFETs with and without a barrier layer material have also been analyzed.

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Le document en format XML

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Ga<sub>0.3</sub>
As MOSFETs With Various Barrier Layer Materials</title>
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<term>High k dielectric</term>
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<front><div type="abstract" xml:lang="en">Sub-50-nm In<sub>0.7</sub>
Ga<sub>0.3</sub>
As MOSFETs with high-k dielectric Al<sub>2</sub>
O<sub>3</sub>
 have been demonstrated and investigated. The device performance of buried-channel In<sub>0.7</sub>
Ga<sub>0.3</sub>
As MOSFETs with various barrier layer materials (i.e., InP and InAlAs) has been analyzed and compared to that of devices without a barrier layer. The 40-nm-gate-length In<sub>0.7</sub>
Ga<sub>0.3</sub>
As MOSFETs with InP/InAlAs barrier exhibit a subthreshold swing of 130 mV/dec, a drain-induced barrier lowering of 174 mV/V, and an extrinsic transconductance of 570 mS/mm at V<sub>ds</sub>
 = 1 V. Scaling behaviors of buried-channel In<sub>0.7</sub>
Ga<sub>0.3</sub>
As MOSFETs with and without a barrier layer material have also been analyzed.</div>
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Ga<sub>0.3</sub>
As MOSFETs with various barrier layer materials (i.e., InP and InAlAs) has been analyzed and compared to that of devices without a barrier layer. The 40-nm-gate-length In<sub>0.7</sub>
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As MOSFETs with InP/InAlAs barrier exhibit a subthreshold swing of 130 mV/dec, a drain-induced barrier lowering of 174 mV/V, and an extrinsic transconductance of 570 mS/mm at V<sub>ds</sub>
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Sub-50-nm In0.7Ga0.3As MOSFETs With Various Barrier Layer Materials

Sub-50-nm In0.7Ga0.3As MOSFETs With Various Barrier Layer Materials

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